產(chǎn)品參數(shù):
工作溫度范圍 0°C to + 70°C 封裝類型 TSOP
The SST39VF3201 device is organized in 2M x16, The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF3201 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.
Features
-Organized as 2M x16: SST39VF3201/3202
-Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 -A (typical)– Auto Low Power Mode: 3 -A (typical)
-Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF3202– Bottom Block-Protection (bottom 32 KWord)for SST39VF3201
-Sector-Erase Capability– Uniform 2 KWord sectors
-Block-Erase Capability– Uniform 32 KWord blocks
-Chip-Erase Capability
-Erase-Suspend/Erase-Resume Capabilities
-Hardware Reset Pin (RST#)
-Security-ID Feature– SST: 128 bits; User: 128 bits
-Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 -s (typical)
-Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)
-All non-Pb (lead-free) devices are RoHS compliant
Parameter Name Value
Density 32 Mbit
Op. Volt Range (V) 2.7 to 3.6
Read Access Time 70ns
Temp Range (°C) -40°C to +85°C
Endurance 100,000
Battery Backup No
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